Titanium doped sapphire is the most widely used crystal for wavelength tunable lasers.
Titanium doped sapphire is the most widely used crystal for wavelength tunable lasers. It is also an excellent medium capable of generating ultrashort pulse, high gain and high power lasing. ATOM have successfully produced large-sized (F120´80mm) Ti: sapphire free of light scatter and with dislocation density less than 102cm-2by using the growth method of Temperature Gradient Technique (TGT). TGT was invented by the scientists in SIOM, which is characterized by the capabilities of growing (0001) oriented sapphire with high doping level (a490=7.5cm-1), high gain, and high laser damage threshold.
Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency have been realized using TGT grown Ti:sapphire. Moreover, TGT grown Ti:sapphire can also meet current applications such as in large aperture amplifiers (diameter up to 50mm) for high power generation and laser fusion etc.
Physical Properties
Chemical Formula Ti3+: Al2O3
Crystal Structure Hexagonal
Unite Cell a=4.758, c=12.991
Density 3.98g/cm3
Hardness 9mols, 1525-2000 Knoop
Melting Point 2040°C
Laser Properties
Laser Action 4-Level Vibronic
Absorption Band 400-600nm (peak at 490)
Tunable Range 660-1100nm (peak at 490)
Fluorescence Time 3.2 ms
Peak Cross-section 3-4´10-19cm2
Refractive Index 1.76 (nominal)
Thermal Properties
Thermal Conductivity 0.105 cal/cm-sec-°C
Thermal Expansion 8.40´10-6/°C
Specific Heat 0.10 cal/g
Heat Capacity 18.6 cal/°C-mole
Laser Rods Specification
Doped Level 0.06-0.5 wt% Ti2O3
FOM 100-300
Diameter 2-50mm or specified
Brewster¢s Angle or Specified
a490 1.0-7.5 cm-1
Flatness 0.1-0.2 l
Path Length 2-100mm or Specified