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RF MOSFET Amplifier Power Module RA07M4452M - RA07M4452M

Module number:RA07M4452M, Frequency range: 440-520MHz, Vdd: 7.2V, rf power module,RoHS compliant - more info check here: http://www.buymeasuringtools.com/RF-MOSFET-Amplifier-Power-Module-RA07M4452M-10019919/

Quick Brief

Place of Origin: Guangdong China (Mainland) Brand Name: MITSUBISHI Model Number: RA07M4452M Usage: Other Theory: Other

Product Features:

Module number:RA07M4452M

Frequency range: 440-520MHz

Vdd: 7.2V

rf power module,RoHS compliant

Business Terms:

Port: shenzhen

Minimum Order Quantity: 5 Piece/Pieces

Supply Ability: 5000 Piece/Pieces per Day

Payment Terms: T/T,Western Union,MoneyGram,paypal

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RF MOSFET Amplifier Power Module RA07M4452M
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Product Packagings & Delivery Terms:

Packaging Detail: Box

Delivery Detail: 2-3days

Specifications and Product Details:

The RA07M4452M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
* Enhancement-Mode MOSFET Transistors
( @ VDD=7.2V, VGG=0V)
* Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
* hT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
* Broadband Frequency Range: 440-520MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
* Module Size: 30 x 10 x 5.4 mm
* Linear operation is possible by setting the quiescent drain currentwith the gate voltage and controlling the output power with the input power.

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RF MOSFET Amplifier Power Module RA07M4452M
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