InGaAs avalanche photodiode module Photo Diode Module

InGaAs avalanche photodiode module - Photo Diode Module

Application:, 1. High responsibility., 2.Wide bandwidth., 3.The gain is up to 20., 4.Coaxial pigtailed package. - more info check here: http://www.buymeasuringtools.com/InGaAs-avalanche-photodiode-module-10341581/

Quick Brief

Place of Origin: Guangdong China (Mainland) Brand Name: BOBLASER Model Number: Photo Diode Module

Product Features:

Application:

1. High responsibility.

2.Wide bandwidth.

3.The gain is up to 20.

4.Coaxial pigtailed package.

Business Terms:

Port: Guang Zhou,China

Minimum Order Quantity: 200 Piece/Pieces

Supply Ability: 2000 Piece/Pieces per Week

Payment Terms: T/T,Western Union,Paypal

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Specifications and Product Details:

InGaAs avalanche photodiode module

Features:

1.High responsibility Application:

2.Wide bandwidth

3.The gain is up to 20

4.Coaxial pigtailed package

Application:

1) Analogue optical receiver with feeble signal

2) OTDR

Technical parameter(TC=25 ºC)

Parameter	Symbol	Test condition	Min.	Typ.	Max.	Unit
Spectrum response	λ	-	1100	-	1650	nm
Diameter of photo surface	Φ	-	-	50	-	μm
Puncture voltage	VBR	Id=100μA	30	45	60	V
Temperature coefficient of puncture voltage	δ	Tc=25~85 ºC	-	0.1	0.15	V/ ºC
Responsibility	R	λ=1310nm M=1	0.8	0.85	-	A/W
Responsibility	R	λ=1550nm M=1	0.9	0.95	-	A/W
Dark current	Id	Φe=0 M=10	-	1	10	nA
Capacity	Ct	M=10 f=1MHz	-	0.4	1.0	Pf
-3dB bandwidth	Fc	λ=1550nm M=10	2	3	-	GHz
Optical return loss	ORL	λ=1550nm SM	30	-	-	dB
Operating voltage	VR	λ=1550nm M=10	0.9~0.95VBR			V