2.5Gb/s InGaAs APD-TIA - Photo Diode Module

Application:, 1.High sensitivity, high credibility., 2.Difference output., 3.Built-in AGC circuit. - more info check here: http://www.buymeasuringtools.com/2-5Gb-s-InGaAs-APD-TIA-10184434/

Quick Brief

Place of Origin: Guangdong China (Mainland) Brand Name: BOBLASER Model Number: Photo Diode Module

Product Features:

Application:

1.High sensitivity, high credibility.

2.Difference output.

3.Built-in AGC circuit.

Business Terms:

Port: Guang Zhou,China

Minimum Order Quantity: 200 Piece/Pieces

Supply Ability: 2000 Piece/Pieces per Week

Payment Terms: T/T,Western Union,Paypal

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Specifications and Product Details:

2.5Gb/s InGaAs APD-TIA

Features:

1) High sensitivity, high credibility

2) Difference output

3) Built-in AGC circuit

4) Spectrum response: 1310nm/1550nm

Application:

1) Telecommunication

2) Digital communication

Optoelectronic features:

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Wavelength	λ	-	1260	-	1610	nm
TIA Voltage	Vcc	-	3.0	3.3	3.5	V
APD break down voltage	VBR	Id=10uA	40	-	60	V
Saturation power	Ps	AC, RL=50	-7	-5	-	dBm
-3dB Bandwidth	BW	AC, RL=50 PIN=-3dBm λ=1310nm,M=10	1.5	1.8	-	GHz
Dark current	Id	-	-	0.5	2	nA
Responsibility	R	PIN=-3dBm, λ=1310nm	0.8	0.85	-	A/W
Sensitivity	Sen	BER=E PBR=2-1 AC, BL=50Ω λ=1310nm	-	-33	-32	dBm

Absolute maximum rating

Parameter	Symbol	Min.	Max.	Unit
TIA Supply Voltage	Vcc	0	3.9	V
TIA Supply Current	Icc	0	70	mA
APD Voltage	Vapd	0	VBR	V
APD Current	Iapd	-	2	mA
Storage Temperature	Tst	-40	+85	ºC
Operating Temperature	Top	-40	+85	ºC
Solder Temperature	Ts	260 ºC (<10Sec)